LIST of NAGASE'S MAIN ACTIVITIES (1992-2009)
- Papers
"Local Conductance Measurement of Double-layer Graphene on SiC Substrate":
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
Nanotechnology 20 (2009) 445704.
"[Invited] Metrology of microscopic properties of graphene on SiC":
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
信学技報ED2009-61,SDM2009-56, 47-52.
"In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe":
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
Nanotechnology 19 (2008) 495701.
"Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe":
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
J. Phys: Conf. Series 100 (2008) 052006.
"Local Conductance Imaging of Semiconductor Nanowires on an Insulative Substrate Using an Integrated Nanogap Probe":
M. Nagase, and H. Yamaguchi,
Jpn. J. Appl. Phys. 46 (2007) 5639-5642.
"Nanogap electrodes on Si cantilever for local conductance measurement":
M. Nagase, and H. Yamaguchi
J. Phys.: Conf. Series, 61 (2007) 856-860.
"Observation of Embedded Structures Using Scanning Electron Microscopy":
M. Nagase,
News Letter (JSAP Thin film and surface physics division), 129 (2007) 31-40. [in Japanese]
"Integrated Nanoprobe for Measuring Microscopic Electronic Properties":
M. Nagase,
NTT Technical Rev., 4 (2006) 48-52.
"Carbon Multiprobe on a Si Cantilever for Pseudo-Metal-Oxide-Semiconductor Field-Effect-Transistor":
M. Nagase, K. Nakamatsu, S. Matsui, H. Namatsu and H. Yamaguchi,
Jpn. J. Appl. Phys. 45 (2006) 2009-2013.
"Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology":
M. Nagase, K. Nakamatsu, S. Matsui and H. Namatsu,
Jpn. J. Appl. Phys. 44 (2005) 5409-5412.
"A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology":
M. Nagase and H. Namatsu,
Jpn. J. Appl. Phys. 43 (2004) 4624-4628.
"Single-electron devices formed by thermal oxidation":
M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi,
J. Electroanal. Chem. 559 (2003) 19-23.
"Nano-four-point probes on microcantilever system fabricated by focused ion beam":
M. Nagase, H. Takahashi, Y. Shirakawabe and H. Namatsu,
Jpn. J. Appl. Phys. 42 (2003) 4856-4860.
"Microscopic observations of single-electron island in Si single-electron transistors":
M. Nagase, S. Horiguchi, A. Fujiwara and Y. Takahashi,
Jpn. J. Appl. Phys. 42 (2003) 2438-2443.
"Nanometrology of Si nanostructures embedded in SiO2 using scanning electron microscopy":
M. Nagase, A. Fujiwara, K. Kurihara and H. Namatsu,
Jpn. J. Appl. Phys. 42 (2003) 318-325.
"Observation of Pattern-dependent Oxidation of Silicon Nanostructures"
Masao NAGASE, Akira FUJIWARA, Hideo NAMATSU, Kenji KURIHARA and Yasuo Takahashi,
J. Surf. Sci. Soc. Jpn, 23 (2002) 573-579. [in Japanese]
"Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation":
M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi,
Appl. Surf. Sci. 190 (2002) 144-150.
"Metrology for nanostructures using atomic microscopy" [Invited paper]:
M. Nagase
Trans. IEICE. J83-C (2000) 804. [in Japanese]
"Imaging of Si nano-patterns embedded in SiO2 using scanning electron microscopy":
M. Nagase and K. Kurihara,
Microelectron. Eng. 53 (2000) 257-260.
"Oxidation of Si nano-structures for single-electron devices":
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, and K. Kurihara
Technical report of IEICE. ED99-293,SDM99-186(2000-02),19.
"Nanometrology using scanning probe microscopy and its application to resist patterns":
M. Nagase, K. Kurihara, H. Namatsu, and T. Makino
AIP Conf. Proc. 449 (1998) 562-566. [Proceedings of 1998 International Conference on Characterization and Metrology for ULSI Technology (AIP) p562.]
"Si nanostructures formed by pattern-dependent oxidation":
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase and K. Kurihara,
Microelectron. Eng. 42 (1998) 527-530.
"Nanoscale deviation of resist pattern evaluated by atomic force microscopy":
M. Nagase, H. Namatsu, K. Kurihara, K. Murase, T. Makino,
J. Advanced Materials 40 (1996) 243-246. (Proceeding of MRS-J`96)
"Critical dimension measurement in nanometer scale by using scanning probe microscopy":
M. Nagase, H. Namatsu, K. Kurihara and T. Makino,
Jpn. J. Appl. Phys. 35 (1996) 4166-4174.
"Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopy":
M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, K. Murase and T. Makino,
Microelectron. Eng. 30 (1996) 419-422.
"Metrology of Atomic-Force Microscopy for Si Nanostructures":
M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate and K. Murase,
Jpn. J. Appl. Phys. 34 (1995) 3382-3387.
"Surface morphology of SIMOX-Si layers characterized using atomic force microscopy":
M. Nagase, T. Ishiyama, K. Murase,
Proc. 6th Int. Symp. SOI Technology and Devices (ECS`94) p191-p196.
"Oxygen Desorption from Molybdenum Oxide by Synchrotron Radiation and Its Surface-Cleaning Applications":
M. Nagase, Y. Utsumi, H. Akawaza and T. Urisu,
App. Phys. Lett. 62 (1993) 234-236.
"Silicidation Using Electron-Cyclotron Resonance Plasma":
M. Nagase, H. Ishii, K. Machida and H. Akiya,
J. Vac. Sci. Technol. B 10 (1992) 1087-1090.
- International Conferences
"Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe":[Invited]
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
17th Int. Colloquium on Scanning Probe Microscopy (ICSPM17), (2009.12.10-12, Atagawa-Height, Higashi-izu, Japan)"Microscopic characterization of few-layer graphene on SiC":[Invited]
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN2009), (2009.11.30-12.4, Sheraton Maui Resort and Spa, Kaanapali, Hawaii, USA)"Metrology of microscopic properties of graphene on SiC":[Invited]
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009),
(2009.6.23-26, Haeundae Grand Hotel, Busan, Korea)"Novel microscopies for graphene on SiC":[Invited]
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices",
(March 2-3, 2009, Conference Hall, Hokkaido Univ., Sapporo, Japan)"Local Conductance of Deformed Graphene Near Atomic Steps on SiC"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
International Symposium on Nanoscale Transport and Technology (ISNTT2009),
(January 20-23, 2009, NTT Atsugi R&D Center, Atsugi, Japan)"Local conductane measurement of deformed double-layer graphene on atomic step-structures of SiC substrate"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
13th Advanced Heterostructures and Nanostructures Workshop (AHNW2008),
(2008.12.7-12.12, Hapuna Beach Prince Hotel, Big Island of Hawaii, USA)"Local conductane measurement of thermally grown graphene on SiC substrate"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
International Symposium on Graphene Devices 2008 (ISGD2008),
(2008.11.17-11.19, Univ. of Aizu, Aizu-wakamatsu, Japan)"In-plane conductane images of few-layer graphene on SiC substrate"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
IEEE Nanotechnology Materials and Devices 2008 (NMDC2008),
(2008.10.20-10.22, Kyoto Univ., Kyoto, Japan)"Local Conductance of Graphene Near Buried Atomic Steps on SiC Substrate"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
International Conference on Nanoscience and Technology 2008 (ICN+T2008),
(2008.7.21-7.25, Keystone, CO, USA)"Conductance of Nano-graphene Island Measured Using Nanogap Electrodes Integrated on Scanning Probe"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
15th International Colloquium on Scanning Probe Microscopy (ICSPM15),
2007.12.6-8, (Atagawa Heights, Japan)"Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe"
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
IVC-17/ICSS13 & ICN+T2007,
2007.7.2-6, (Stockholm International Fairs, Stockholm, Sweden)"Conductance Image of InAs Nanowires on a GaAs Substrate Using Integrated Nanogap Electrode Probe"
M. Nagase and H. Yamaguchi,
Int. Conf. on Nanoelectronics, Nanostructures and Carrier Interactions (NNCI2007),
2007.2.20-23, (Atsugi, Japan)"Local conductance imaging of nanomaterials on insulator using an integrated nanogap probe"
M. Nagase and H. Yamaguchi,
14th International Colloquium on Scanning Probe Microscopy (ICSPM14),
2006.12.7-9, (Atagawa Heights, Japan)"Nano-Gap Electrodes on Si Cantilever for Local Conductance Measurement"
M. Nagase and H. Yamaguchi,
International Conference on Nanoscience and Technology 2006 (ICN+T2006),
2006.7.30-8.4, (The Congress Center Basel, Basel, Switzerland)"Tip Shape Characterization with a Si Nanostructure Fabricated Using Anisotropic Etching"
M. Nagase and K. Kurihara,
Second International Symposium on Standard Materials and Metrology for Nanotechnology (SMAM-2),
2006.5.25-26, (AIST, Akihabara Convention Hall, Tokyo, Japan)"Carbon Multi-probes on a Si Cantilever for Pseudo-MOSFET":
M.Nagase, K. Nakamatsu, S. Matsui and H. Namatsu,
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, 13th International Colloquium on Scanning Probe Microscopy (STM05/ICSPM13),
2005.7.3-7.8, (JSAP, Sapporo Convention Center, Sapporo, Japan)"Imaging of Nano-scale Embedded Dislocation Networks in Si Bicrystal":
M. Nagase, Y. Ishikawa, Y. Ono and M. Tabe,
2005 Silicon Nanoelectronics Workshop (SNW2005),
2005.6.12-6.13, (JSAP and IEEE EDS, Rihga Royal Hotel Kyoto, Kyoto, Japan)"Carbon multi-probes with nano-springs on a Si cantilever grown by ion beam-induced deposition":
M.Nagase, K. Nakamatsu, S. Matsui and H. Namatsu,
Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2005),
2005.1.31-2.2, (NTT, NTT Atsugi R&D center, Atsugi, Kanagawa)"Conductive multi-probe with nano-spring on Si cantilever grown by focused ion beam chemical vapor deposition":
M.Nagase, K. Nakamatsu, S. Matsui and H. Namatsu,
The 12th International Colloquium on Scanning Probe Microscopy (ICSPM12),
2004.12.9-12.11, (Thin Film and Surface Physics Division of Japan Society of Applied Physics, Atagawa Heights, Shizuoka, Japan)"Proposal for an assembly method for nanoelectromechanical devices on microcantilevers using focused ion beam technology":
M.Nagase and H. Namatsu,
The 11th International Colloquium on Scanning Probe Microscopy (ICSPM11),
2003.12.11-12.13, (Thin Film and Surface Physics Division of Japan Society of Applied Physics, Atagawa Heights, Shizuoka, Japan)"Nano-four-point Probes on Micro-cantilever System Fabricated by Focused Ion Beam":
M.Nagase, H. Takahashi, Y. Shirakawabe, T. Kaito and H. Namatsu,
The 10th International Colloquium on Scanning Probe Microscopy (ICSPM10),
2002.10.31-11.2, (Thin Film and Surface Physics Division of Japan Society of Applied Physics, Waikiki, Hawaii, USA)"Evaluation of Lattice Distortion with Nanometer Resolution in Si Single-electron Transistor":
M. Nagase, S. Horiguchi, A. Fujiwara, and Y. Takahashi,
2002 Int. Conf. on Solid State Device and Materials (SSDM2002),
2002.9.17-19, (Japan Society of Applied Physics,Nagoya Congress Center, Nagaya, JAPAN)"Three-dimensional size evaluation of island in Si single-electron transistor":
M. Nagase, S. Horiguchi, A, Fujiwara, and T. Takahashi
2001 Int. Conf. on Solid State Devices and Materials (SSDM2001),
2001.9.26-29, (JAPAN Society of Applied Physics, Diamond Hotel, Tokyo, Japan)"Single-electron devices formed by thermal oxidation":[Invited]
M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi
Int. Symp. on Materials Processing for Nanostructured Devices 2001 (MPND2001),
2001.9.16-19, (Kansai Seminar House, Kyoto, Japan)"Single-electron Devices Formed by Pattern-dependent Oxidation":[Invited]
M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, and Y. Takahashi
The 8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8),
2001.6.10-15, (Hokkaido University in Sapporo, Japan)"Imaging of Si nano-patterns embedded in silicon oxide using scanning electron microscopy":
M. Nagase and K. Kurihara
Int. Conf. Micro-and-Nano Engineering 99 (MNE99),
1999.9.21-23, (Rome,ITALY)"Nanometrology using scanning probe microscopy and its application to resist pattern":
M. Nagase, K. Kurihara, H. Namatsu, T. Makino
The 2nd Int. Conf. on Characterization and Metrology for ULSI Technology,
1998.3.23-27, (Gaithersburg/MD,USA)
"Si nanostructures formed by pattern-dependent oxidation":
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase and K. Kurihara,
Int. Conf. Micro-and-Nano Engineering 97 (MNE97),
1997.9.15-18, (Athens, Greece)
"Nanoscale deviation of resist pattern evaluated by atomic force microscopy":
M. Nagase, H. Namatsu, K. Kurihara, T. Yamaguchi, T. Makino,
The symposium on Materials Research Society of Japan (MRS-J96),
1996.5.22-24, (Makuhari/Chiba, Japan)
"Nano Pattern Fluctuation of Electron Beam Resist Evaluated by Atomic force Microscope":
M. Nagase, H. Namatsu, K. Kurihara, K. Murase, T. Makino,
Int. Conf. Micro-and-Nano Engineering (MNE95),
1995.9.26-28, (Aix en Provence, France)
"Surface Morphology of SIMOX-Si Layers Characterized using Atomic Force Microscopy":
M. Nagase, T. Ishiyama, K. Murase,
The 185th ElectroChemical Society Meeting (ECS94),
1994.5.22-27, (San Francisco, USA)
"SITE-Specific Oxygen Desorption from Molybdenum Oxide by SR Irradiation and Surface Cleaning Applications":
M. Nagase, Y. Utsumi, H. Akazawa, and T. Urishu,
1992 Int. Microprocess Conference (MPC｡ﾇ92),
1992.7.13, (KSP, Kanagawa, Japan)
Last modified:2010/1/21