INDEX
- ナノ計測
- グラフェン関連
- ナノ機械系
- ナノプローブシステム
- ナノ測長：ＳＥＭ
- ナノ測長：ＡＦＭ
- 表面／パターンエッジラフネス
- グラフェン関連
- ナノ加工
- ナノ加工応用技術
- パターン依存酸化
- ナノリソグラフィ：ＥＢ
- ナノリソグラフィ：レジスト
- ＥＣＲ反転プロセス
- ＫＯＨ異方性エッチング
- ＳＩＭＯＸ／Ｓｉエピ基板
- ナノ加工応用技術
- ナノデバイス
- ナノ材料デバイス
- 単電子トランジスタ：モデル
- 単電子トランジスタ：デバイス
- 単電子トランジスタ：回路
- ナノ細線
- ＭＯＳＦＥＴ
- ナノ材料デバイス
- 放射光／シリサイド
- 放射光
- シリサイド
- 放射光
LIST
- ナノ計測
- グラフェン関連
"Local Conductance Measurement of Double-layer Graphene on SiC Substrate":
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
Nanotechnology 20 (2009) 445704.
"Stacking domains of epitaxial few-layer graphene on SiC(0001)":
H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, and H. Yamaguchi,
Phys. Rev. B 80 (2009) 085406.
"[Invited] Metrology of microscopic properties of graphene on SiC":
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
信学技報ED2009-61,SDM2009-56, 47-52.
"Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces":
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, and Hiroshi Yamaguchi,
Appl. Phys. Express 2 (2009) 065502.
"In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe":
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
Nanotechnology 19 (2008) 495701.
"Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy":
H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, Y. Kobayashi, and H. Yamaguchi,
e-J. Surf. Sci. Nanotech. 6 (2008) 107-110.
"Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe":
M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
J. Phys: Conf. Series 100 (2008) 052006.
"Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons":
H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi,
Phys. Rev. B 77 (2008) 075413.
- ナノ機械系
"Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy":
Keiichiro NONAKA, Kojiro TAMARU, Masao NAGASE, Hiroshi YAMAGUCHI, Shinichi WARISAWA, and Sunao ISHIHARA,
Jpn. J. Appl. Phys. 48 (2009) 06FG07.
"Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy":
Kojiro TAMARU, Keiichiro NONAKA, Masao NAGASE, Hiroshi YAMAGUCHI, Shinichi WARISAWA, and Sunao ISHIHARA,
Jpn. J. Appl. Phys. 48 (2009) 06FG06.
"Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition":
Keiichiro NONAKA, Kojiro TAMARU, Masao NAGASE, Hiroshi YAMAGUCHI, Shinichi WARISAWA, and Sunao ISHIHARA,
Jpn. J. Appl. Phys. 47 (2008) 5116-5119.
"Fabrication of diamond-like carbon nanosprings by focused-ion-beam chemical vapor deposition and evaluation of their mechanical characteristics":
K. Nakamatsu, M. Nagase, T. Ichihashi, K. Kanda, Y. Haruyama, T. Kaito, and S. Matsui,
IEICE T ELECTRON, E90C (2007) 41-45.
"Mechanical characteristics of tungsten-containing carbon nanosprings grown by FIB-CVD":
K. Nakamatsu, J. Igaki, M. Nagase, T. Ichihashi and S. Matsui,
Microelectron. Eng., 83 (2006) 808-810.
"Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition ":
K. Nakamatsu, M. Nagase, H. Namatsu and S. Matsui,
Jpn. J. Appl. Phys. 44 (2005) L1228-L1230.
- ナノプローブシステム
"Local Conductance Imaging of Semiconductor Nanowires on an Insulative Substrate Using an Integrated Nanogap Probe":
M. Nagase, and H. Yamaguchi,
Jpn. J. Appl. Phys. 46 (2007) 5639-5642.
"Nanogap electrodes on Si cantilever for local conductance measurement":
M. Nagase, and H. Yamaguchi
J. Phys.: Conf. Series, 61 (2007) 856-860.
"Integrated Nanoprobe for Measuring Microscopic Electronic Properties":
M. Nagase,
NTT Technical Rev., 4 (2006) 48-52.
"Carbon Multiprobe on a Si Cantilever for Pseudo-Metal-Oxide-Semiconductor Field-Effect-Transistor":
M. Nagase, K. Nakamatsu, S. Matsui, H. Namatsu and H. Yamaguchi,
Jpn. J. Appl. Phys. 45 (2006) 2009-2013.
"Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology":
M. Nagase, K. Nakamatsu, S. Matsui and H. Namatsu,
Jpn. J. Appl. Phys. 44 (2005) 5409-5412.
"A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology":
M. Nagase and H. Namatsu,
Jpn. J. Appl. Phys. 43 (2004) 4624-4628.
"Nano-four-point probes on microcantilever system fabricated by focused ion beam":
M. Nagase, H. Takahashi, Y. Shirakawabe and H. Namatsu,
Jpn. J. Appl. Phys. 42 (2003) 4856-4860.
- ナノ測長：ＳＥＭ
"走査電子顕微鏡による埋もれた構造体の観察":
永瀬 雅夫,
News Letter (応用物理学会 薄膜・表面物理分科会誌), 129 (2007) 31-40.
"Mechanism of bright selective imaging of single-walled carbon nanotubes on insulators by scanning electron microscopy":
Yoshikazu Homma, Satoru Suzuki, Yoshihiro Kobayashi, Masao Nagase, and Daisuke Takagi
Appl. Phys. Lett. 84 (2004) 1750-1752.
"Nanometrology of Si nanostructures embedded in SiO2 using scanning electron microscopy":
M. Nagase, A. Fujiwara, K. Kurihara and H. Namatsu,
Jpn. J. Appl. Phys. 42 (2003) 318-325.
"Imaging of Si nano-patterns embedded in SiO2 using scanning electron microscopy":
M. Nagase and K. Kurihara,
Microelectron. Eng. 53 (2000) 257-260.
- ナノ測長：ＡＦＭ
"走査プローブ顕微鏡を用いたレジストパターン評価" [解説記事]:
永瀬 雅夫
光学 34 (2005) 138-144. [in Japanese]
"Metrology for nanostructures using atomic microscopy" [Invited paper]:
M. Nagase
Trans. IEICE. J83-C (2000) 804. [in Japanese]
"Nanometrology using scanning probe microscopy and its application to resist patterns":
M. Nagase, K. Kurihara, H. Namatsu, and T. Makino
AIP Conf. Proc. 449 (1998) 562. [Proceedings of 1998 International Conference on Characterization and Metrology for ULSI Technology (AIP) p562.]
"Critical dimension measurement in nanometer scale by using scanning probe microscopy":
M. Nagase, H. Namatsu, K. Kurihara and T. Makino,
Jpn. J. Appl. Phys. 35 (1996) 4166-4174.
"Metrology of Atomic-Force Microscopy for Si Nanostructures":
M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate and K. Murase,
Jpn. J. Appl. Phys. 34 (1995) 3382-3387.
- 表面／パターンエッジラフネス
"Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures":
T. Sakata, H. Ishii, Y. Okabe, N. Sato, M. Nagase, T. Kamei, K. Kudou, M. Yano and K. Machida,
IEEJ Trans. SM, 126 (2006) 14-18.
"Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures":
T. Sakata, H. Ishii, Y. Okabe, M. Nagase, T. Kamei, K. Kudou, M. Yano and K. Machida,
Jpn. J. Appl. Phys. 44 (2005) 5732-5735.
"Influence of edge roughness in resist patterns on etched patterns":
H. Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki and K. Kurihara,
J. Vac. Sci. Technol. B 16 (1998) 3315-3321.
"Nanoscale deviation of resist pattern evaluated by atomic force microscopy":
Masao Nagase, Hideo Namatsu, Kenji Kurihara, Touru Yamaguchi, and Takahiro Makino,
Trans. Mater. Res. Soc. Jpn. (Proceeding of MRS-J`96) 20 (1996) 243.
"Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopy":
M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, K. Murase and T. Makino,
Microelectron. Eng. 30 (1996) 419-422.
"Surface Morphology of SIMOX-Si Layers Characterized Using Atomic Force Microscopy":
Masao Nagase, Toshihiko Ishiyama, and Katsumi Murase,
Proc. 6th Int. Symp. SOI Technology and Devices (ECS`94) p191-p196.
- グラフェン関連
- ナノ加工
- ナノ加工/ナノ材料応用技術
"Origin of ferromagnetism of MnSi[sub 1.7] nanoparticles in Si: First-principles calculation":
Shin Yabuuchi, Hiroyuki Kageshima, Yukinori Ono, Masao Nagase, Akira Fujiwara, and Eiji Ohta
Phys. Rev. B, 48 (2008) 045307.
"Ferromagnetism of Manganese-Silicide Nanopariticles in Silicon":
Shin Yabuuchi, Yukinori Ono, Masao Nagase, Hiroyuki Kageshima, Akira Fujiwara, and Eiji Ohta
Jpn. J. Appl. Phys., 47 (2008) 4487-4490.
"Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of a-Sb2O4/VSbO4":
Y. Ohminami, S. Suzuki, N. Matsudaira, T. Nomura, W. Chun, K. Ijima, M. Nakamura, K. Mukasa, M. Nagase, and K. Asakura
Bulletin Chemi. Soc. Jpn., 78 (2005) 435-442.
- パターン依存酸化
"X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process":
T. Shimura, K. Yasutake, M. Umeno and M. Nagase,
Appl. Phys. Lett., 86 (2005) 071903.
"Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates":
M. Uematsu, H. Kageshima, K. Shiraishi, M. Nagase, S. Horiguchi and Y. Takahashi,
Solid-State Electronics, 48 (2004) 1073-1078.
"Observation of Pattern-dependent Oxidation of Silicon Nanostructures":
Masao NAGASE, Akira FUJIWARA, Hideo NAMATSU, Kenji KURIHARA and Yasuo Takahashi,
J. Surf. Sci. Soc. Jpn, 23 (2002) 573-579. [in Japanese]
"Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation":
M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu and Y. Takahashi,
Appl. Surf. Sci. 190 (2002) 144-150.
"Oxidation of Si nano-structures for single-electron devices":
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, and K. Kurihara
Technical report of IEICE. ED99-293,SDM99-186(2000-02),19.
"Si nanostructures formed by pattern-dependent oxidation":
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase and K. Kurihara,
Microelectron. Eng. 42 (1998) 527-530.
- ナノリソグラフィ：ＥＢ
"Novel proximity effect including pattern-dependent resist development in electron beam nanolithography":
K. Yamazaki, K. Kurihara, T. Yamaguchi, H. Namatsu and M. Nagase,
Jpn. J. Appl. Phys. 36 (1997) 7552-7556.
"An electron beam nanolithography system and its application to Si nanofabrication":
K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase, H. Takenaka and K. Murase,
Jpn. J. Appl. Phys. 34 (1995) 6940-6946.
- ナノリソグラフィ：レジスト
"Line-edge roughness: Characterization and material origin":
T. Yamaguchi, K. Yamazaki, M. Nagase and H. Namatsu,
Jpn. J. Appl. Phys. 42 (2003) 3755-3762.
"Resist thinning effect on nanometer-scale line-edge roughness":
K. Kanzaki, T. Yamaguchi, M. Nagase, K. Yamazaki and H. Namatsu,
Jpn. J. Appl. Phys. 41 (2002) L1342-L1344.
"A new approach to reducing line-edge roughness by using a cross-linked positive-tone resist":
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara,
Jpn. J. Appl. Phys. 38 (1999) 7114-7118.
"Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations":
H. Namatsu, T. Yamaguchi, M. Nagase, K. Yamazaki and K. Kurihara,
Microelectron. Eng. 42 (1998) 331-334.
"Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations":
H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase and K. Kurihara,
J. Vac. Sci. Technol. B 16 (1998) 69-76.
"Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films":
T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara,
App. Phys. Lett. 71 (1997) 2388-2390.
- ＥＣＲ反転プロセス
"Si nanostructures fabricated by nanoscale local oxidation using an ECR plasma nitride nanomask":
K. Kurihara, Y. Watanabe and M. Nagase,
Microelectron. Eng. 46 (1999) 117-120.
"Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidation":
K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase and K. Murase,
J. Vac. Sci. Technol. B 13 (1995) 2170-2174.
"Electron-Beam Nanolithography with Image Reversal by Ecr Plasma Oxidation":
K. Kurihara, K. Iwadate, H. Namatsu, M. Nagase and K. Murase,
Microelectron. Eng. 27 (1995) 125-128.
- ＫＯＨ異方性エッチング
"Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching":
K. Kurihara, H. Namatsu, M. Nagase and T. Makino,
Jpn. J. Appl. Phys. 35 (1996) 6668-6672.
"Influence of patterning in silicon quantum well structures on photoluminescence":
H. Namatsu, T. Furuta, M. Nagase, K. Kurihara, K. Iwadate, K. Murase and T. Makino,
J. Vac. Sci. Technol. B 14 (1996) 2500-2504.
"Photoluminescence from oxidized silicon nano-lines":
H. Namatsu, T. Furuta, M. Nagase, K. Kurihara, K. Iwadate, K. Murase and T. Makino,
Microelectron. Eng. 30 (1996) 463-466.
"10-Nm Silicon Lines Fabricated in (110) Silicon":
H. Namatsu, M. Nagase, K. Kurihara, K. Wadate and K. Murase,
Microelectron. Eng. 27 (1995) 71-74.
"Dimensional Limitations of Silicon Nanolines Resulting from Pattern Distortion Due to Surface-Tension of Rinse Water":
H. Namatsu, K. Kurihara, M. Nagase, K. Iwadate and K. Murase,
App. Phys. Lett. 66 (1995) 2655-2657.
"Fabrication of Sub-10-Nm Silicon Lines with Minimum Fluctuation":
H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, T. Furuta and K. Murase,
J. Vac. Sci. Technol. B 13 (1995) 1473-1476.
- ＳＩＭＯＸ／Ｓｉエピ基板
"Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing":
T. Ishiyama, M. Nagase and Y. Omura,
Appl. Surf. Sci. 190 (2002) 16-19.
"Thermal Agglomeration of Thin Single-Crystal Si on Sio2 in Vacuum":
Y. Ono, M. Nagase, M. Tabe and Y. Takahashi,
Jpn. J. Appl. Phys. 34 (1995) 1728-1735.
"Examination of correlation of surface morphologies of top-silicon and buried oxide layers in high-temperature-annealed separation by implanted oxygen wafers":
T. Ishiyama and M. Nagase,
Jpn. J. Appl. Phys. 34 (1995) 6019-6020.
"Microstructure of Si Surface Epitaxially Grown in SiH4-H2 System":
Yasuo Kunii and Masao Nagase,
Ext. Abst. 1995 Int. Conf. on Solid State Devices and Materials p.971.
- ナノ加工/ナノ材料応用技術
- ナノデバイス
- ナノ材料デバイス
"Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition":
Katsuhiko Nishiguchi, Masao Nagase, Toru Yamaguchi, Akira Fujiwara, and Hiroshi Yamaguchi,
Jpn. J. Appl. Phys., 47 (2008) 5106-5108.
"A Field-Effect Transistor with a Deposited Graphite Thin Film":
Hiroshi Inokawa , Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, and Keiichi Torimitsu,
Jpn. J. Appl. Phys., 46 (2007) 2615-2617.
"Effect of UV/ozone treatment on Nanogap Electrodes for Molecular Devices":
Touichiro Goto, Hiroshi Inokawa, Koji Sumitomo, Masao Nagase, Yukinori Ono and Keiichi Torimitsu,
Jpn. J. Appl. Phys., 46 (2007) 1731-1733.
- 単電子トランジスタ：モデル
"Single-electron devices formed by thermal oxidation":
M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi,
J. Electroanal. Chem. 559 (2003) 19-23.
"Microscopic observations of single-electron island in Si single-electron transistors":
M. Nagase, S. Horiguchi, A. Fujiwara and Y. Takahashi,
Jpn. J. Appl. Phys. 42 (2003) 2438-2443.
"Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation":
S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi and K. Murase,
Jpn. J. Appl. Phys. 40 (2001) L29-L32.
"Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach":
K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, M. Uematsu, Y. Takahashi and K. Murase,
Physica E 7 (2000) 337-341.
- 単電子トランジスタ：デバイス
"Influence of oxidation temperature on Si-single electron transistor characteristics":
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi,
J. Vac. Sci. Technol. B 21 (2003) 2869-2873.
"Threshold voltage of Si single-electron transistor":
A. Fujiwara, S. Horiguchi, M. Nagase and Y. Takahashi,
Jpn. J. Appl. Phys. 42 (2003) 2429-2433.
"Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography":
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara and S. Horiguchi,
J. Vac. Sci. Technol. B 21 (2003) 1-5.
"Single-electron and quantum SOI devices":
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi,
Microelectron. Eng. 59 (2001) 435-442.
"Double-island single-electron devices - A useful unit device for single-electron logic LSI's":
A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara and K. Murase,
IEEE Trans. ED 46 (1999) 954-959.
"Silicon single-electron devices":
Y. Takahashi, A. Fujiwara, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate and K. Murase,
Int. J. Electron. 86 (1999) 605-639.
"Room temperature operated single electron transistor fabricated by electron beam nanolithography":
K. Kurihara, H. Namatsu, M. Nagase and T. Makino,
Microelectron. Eng. 35 (1997) 261-264.
"Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates":
Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase and K. Murase,
IEEE Trans. ED 43 (1996) 1213-1217.
"Si single-electron transistors on SIMOX substrates":
Y. Takahashi, A. Fujiwara, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate and K. Murase,
IEICE Trans. Electron. E79C (1996) 1503-1508.
"Fabrication Technique for Si Single-Electron Transistor Operating at Room-Temperature":
Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwdate, K. Nakajima, S. Horiguchi, K. Murase and M. Tabe,
Electron. Lett. 31 (1995) 136-137.
"Transport-Properties of Silicon Nanostructures Fabricated on Simox Substrates":
K. Murase, Y. Takahashi, Y. Nakajima, H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, S. Horiguchi, M. Tabe and K. Izumi,
Microelectron. Eng. 28 (1995) 399-405.
"Conductance Oscillations of a Si Single Electron Transistor at Room Temperature":
Yasuo Takahashi, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Kazumi Iwadate, Yashuyuki Nakajima, Seiichi Horiguchi, Katsumi Murase, and Michiharu Tabe,
Tech. Dig. Int. Electron Devices Meeting, 1994, p.938.
- 単電子トランジスタ：回路
"Fabrication of single-electron transistors and circuits using SOIs":
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi,
Solid State Electron. 46 (2002) 1723-1727.
"Fabrication method for IC-oriented Si single-electron transistors":
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase,
IEEE Trans. ED 47 (2000) 147-153.
"Si complementary single-electron inverter with voltage gain":
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase,
App. Phys. Lett. 76 (2000) 3121-3123.
"Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation":
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase,
Jpn. J. Appl. Phys. 39 (2000) 2325-2328.
- ナノ細線
"Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics":
H. Namatsu, S. Horiguchi, M. Nagase and K. Kurihara,
J. Vac. Sci. Technol. B 15 (1997) 1688-1696.
"Fabrication of SiO2/Si/SiO2 double barrier diodes using two-dimensional Si structures":
H. Namatsu, S. Horiguchi, Y. Takahashi, M. Nagase and K. Kurihara,
Jpn. J. Appl. Phys. 36 (1997) 3669-3674.
"Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching":
H. Namatsu, K. Kurihara, M. Nagase and T. Makino,
App. Phys. Lett. 70 (1997) 619-621.
"Fabrication of one-dimensional silicon nanowire structures with a self-aligned point contact":
H. Namatsu, M. Nagase, K. Kurihara, S. Horiguchi and T. Makino,
Jpn. J. Appl. Phys. 35 (1996) L1148-L1150.
"Fabrication of thickness-controlled silicon nanowires and their characteristics":
H. Namatsu, Y. Takahashi, M. Nagase and K. Murase,
J. Vac. Sci. Technol. B 13 (1995) 2166-2169.
- ＭＯＳＦＥＴ
"Abnormal threshold voltage dependence on gate length in ultrathin-film n-channel metal-oxide-semiconductor field-effect transistors (nMOSFET's) using separation by implanted oxygen (SIMOX) technology":
Y. Omura and M. Nagase,
Jpn. J. Appl. Phys. 35 (1996) L304-L307.
"Low-Temperature Drain Current Characteristics in Sub-10-Nm-Thick Soi Nmosfets on Simox (Separation by Implanted Oxygen) Substrates":
Y. Omura and M. Nagase,
Jpn. J. Appl. Phys. 34 (1995) 812-816.
- ナノ材料デバイス
- 放射光／シリサイド他
- 放射光
"Gas and Adsorbate Excitation Pathways in Synchrotron-Radiation Excited Si Growth Using Disilane":
H. Akazawa, M. Nagase and Y. Utsumi,
App. Phys. Lett. 64 (1994) 754-756.
"Species-Specific Growth-Kinetics and Film Properties in Synchrotron Radiation-Excited Si Growth with Disilane":
H. Akazawa, Y. Utsumi and M. Nagase,
Appl. Surf. Sci. 80 (1994) 299-303.
"Synchrotron-Radiation Stimulated Evaporation and Defect Formation in a-Sio2":
H. Akazawa, M. Nagase and Y. Utsumi,
Nucl. Instrum. Meth. B 91 (1994) 644-647.
"Si Crystal-Growth Mediated by Synchrotron-Radiation-Stimulated Hydrogen Desorption":
H. Akazawa, Y. Utsumi, T. Urisu and M. Nagase,
Phys. Rev. B 47 (1993) 15946-15949.
"Perfectly Selective Si Epitaxial-Growth Due to Synchrotron Radiation Irradiation During Disilane Molecular-Beam Epitaxy":
Y. Utsumi, H. Akazawa, M. Nagase, T. Urisu and I. Kawashima,
App. Phys. Lett. 62 (1993) 1647-1649.
"Oxygen Desorption from Molybdenum Oxide by Synchrotron Radiation and Its Surface-Cleaning Applications":
M. Nagase, Y. Utsumi, H. Akawaza and T. Urisu,
App. Phys. Lett. 62 (1993) 234-236.
- シリサイド
"Silicidation Using Electron-Cyclotron Resonance Plasma":
M. Nagase, H. Ishii, K. Machida and H. Akiya,
J. Vac. Sci. Technol. B 10 (1992) 1087-1090.
- その他（大学時代のテーマ）
"Experimental Study of Inelastic Process at the Crystal Surface in Angle Resolved Low-Energy Electron Energy Loss Spectroscopy":
Y. Ohkawa, T. Nishida, M. Nagase, and T. Ichinokawa,
J. Phys. Soc. Jpn. 54 (1985) 282-288.
- 放射光
- その他
- 著書等
工業材料 2010年１月号に寄稿記事"炭素材料グラフェン"が掲載
日刊工業新聞：記事"グラフェントランジスタ 次世代素子実用化競う"にコメントが掲載(2009.12.7)
東京MXテレビ「ガリレオチャネル」に出演 (2009.9.19)
日本経済新聞に取材記事「高機能の新炭素材料「グラフェン」」が掲載(2009.9.7)
WOWOW「探求者たち「青木義男教授の挑戦」」に出演 (2009.9.6)
"グラフェンの機能と応用展望"
(一部（第１１章 SiC上のグラフェン成長と電気特性）の執筆を分担)
GAKKEN MOOK 決定版 ロケットと宇宙開発（学研）p.134にグラフェン画像提供（2009.7）
日刊工業新聞：記事”CNTからグラフェンへ”にコメントが掲載（2009.5.26）
「未来材料」３月号に寄稿記事トピックス”グラフェンのエレクトロニクスへの展開”が掲載
日本セラミックス協会誌「セラミックス」３月号に寄稿記事：トピックス”グラフェンのミクロスコピックな物性の解明”が掲載
日本化学会会誌「化学と工業」１２月号に取材記事が掲載
日刊工業新聞に取材記事「炭素材料｢グラフェン｣に脚光」が掲載（2008.12.1）
"Yearbook of Science & Technology 2007" (The McGraw-Hill Companies)
(一部（Nanometrology）の執筆を分担)
"イミダス２００６"（集英社）p. 861. ナノテクノロジー："カーボンでできたナノのばね" イミダスへ
(資料提供）ナノのばねの動画(.mov) orナノのばねの動画(.mp4)
"ナノスプリング付きカーボンプローブのＳｉカンチレバー上への集積化"
(NTT物性科学基礎研究所・活動報告2004より)
"先端の分析法 ー理工学からナノ・バイオまでー"
(一部（応用編 第４章 半導体プロセス 第６節 半導体微少部分析）の執筆を分担)
”ナノ四探針プローブシステム”:日経先端技術（No.64:2004.06.28)
"ナノテクノロジーのための走査電子顕微鏡"
(一部（４・１半導体ナノ構造の観察）の執筆を分担)
- セミナー・招待講演等
"Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe": M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
17th Int. Colloquium on Scanning Probe Microscopy (ICSPM17), (2009.12.10-12, Atagawa-Height, Higashi-izu, Japan)"Microscopic characterization of few-layer graphene on SiC": M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi,
Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN2009), (2009.11.30-12.4, Sheraton Maui Resort and Spa, Kaanapali, Hawaii, USA）"エピタキシャル・グラフェンの走査プローブ顕微鏡による物性評価"：永瀬雅夫
有機バイオSPM研究会・2009「先端材料をプローブ顕微鏡で観る・測る」 （2009.9.4, 幕張メッセ国際展示場, 千葉市）"Metrology of microscopic properties of graphene on SiC": M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
AWAD2009 (2009.6.24, Haeundae Grand Hotel, Busan, Korea)"SiC上グラフェンの物性評価"：永瀬雅夫
有機デバイス研究会・第７７会研究会「グラフェンの最新技術動向と展望」（2009.4.24 静岡大学浜松キャンパス・佐鳴会館、浜松市）"Novel microscopies for graphene on SiC": M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
2009 RCIQE国際セミナー (2009.3.2 北海道大学学術交流センター、札幌市)"SiC上のグラフェン"ー走査プローブ顕微鏡による評価技術ー：永瀬雅夫
学振ナノプローブテクノロジー第１６７委員会・第５３回研究会 （2009.1.8 キャンパスプラザ京都、京都市)"SiC上のグラフェン成長と電気特性"：永瀬雅夫，日比野浩樹，影島博之，山口浩司
第55回応用物理学関係連合講演会・薄膜・表面物理分科会企画シンポジウム 「グラフェンは"面白い"、"役に立つ"−基礎物理から応用まで−」（2008.3.28 日本大学理工学部 船橋キャンパス）"マイクロカンチレバー上の集積化ナノプローブ"：永瀬雅夫
2007年度第2回マイクロ・ナノ材料評価/微小機械部品設計技術に関する調査研究会（2008.2.14 立命館大学 びわこ・草津キャンパス・防災システムリサーチセンター・2F第2会議室）"ナノギャッププローブによる物性評価" -ナノの電気抵抗を可視化する- :サイエンスプラザ２００７ (2007.11.22 NTT厚木研究開発センター)
"走査ナノプローブによるナノ計測" :ＳＩＩーＮＴ走査プローブ顕微鏡セミナー (2007.7.11、科学技術館サイエンスホール)
"ナノ計測のためのナノツール" :セミコン２００６ＳＩＩーＮＴセミナー (2006.12.6、幕張メッセ)
"走査電子顕微鏡による埋もれた構造体の観察" :第35回 薄膜・表面物理基礎講座(2006年) 「界面を非破壊で見る先端分析技術の基礎と応用」(2006.11.16、応用物理学会薄膜表面分科会、東京理科大)
"ナノ加工技術を応用したナノ計測技術" :第２回有機テクノロジー展／有機テクノロジー国際会議（オルガテクノ２００６）」併設「有機ビジネステクニカルセミナー」 (2006.7.25 パシフィコ横浜)"集積化３次元ナノプローブシステム" :サイエンスプラザ２００５F (2005.10.28 NTT厚木研究開発センター)
"ナノ４探針プローブ" :サイエンスプラザ２００５ (2005.1.24 NTT厚木研究開発センター)
"透視SEMによる 半導体ナノ構造の観察" :SCANTECH2004 (2004.9.3 日本女子大学)
"ＳＰＭによるナノ材料の評価" :セミコン２００２ＳＩＩセミナー (2002.12.4、幕張メッセ)
"Ｓｉナノデバイス開発におけるナノ構造計測技術"-単電子トランジスタの構造解析- :日立エレクトロニクスフォーラム (2001.6.11、日製産業、コクヨホール)
"電子ビーム露光によるナノ構造形成"−作製・評価・応用− :第30回 薄膜・表面物理基礎講座(2001年) 「ナノテクノロジーの基礎と応用」(2001.11.21、応用物理学会薄膜表面分科会、御茶ノ水スクェア)
"パターン依存酸化により形成したＳｉナノ構造" :第38回「半導体表面化学セミナー」 （1999.5.31, 東大尾嶋研, 東大本郷）
- 著書等
Last modified:2010/1/21